Intel stated that it is will use two new materials to build the insulating walls and switching gates of its 45nm transistors. For its 45nm production, Intel will use a new material with a property called high-k for the transistor gate dielectric, and a new combination of metal materials for the transistor gate electrode. Intel Co-Founder Gordon Moore noted that the implementation of high-k and metal materials marks the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s.
IBM also announced that it has made a breakthrough in high-k metal gate development. Working with AMD, Sony and Toshiba, IBM said it has already inserted the technology into its semiconductor manufacturing line in East Fishkill, NY and it will also apply the technology into 45nm production starting in 2008.